Paramagnetic point defects in silicon nitride and silicon oxynitride thin films on silicon

Colloids and Surfaces A: Physicochemical and Engineering Aspects

Volumn 115, Issue , 1996, Pages 311-317

  Warren, William L ^a   Kanicki, Jerzy ^b   Poindexter, Edward H ^c  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b UNIVERSITY OF MICHIGAN   (United States)

^c U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

paramagnetic point defects; silicon; silicon nitride thin film; silicon oxynitride thin film

Indexed keywords

COMPOSITION; ELECTRONIC DENSITY OF STATES; ELECTRONS; ENERGY GAP; PARAMAGNETISM; POINT DEFECTS; SILICA; THIN FILMS; ULTRAVIOLET RADIATION;

PARAMAGNETIC POINT DEFECTS; SILICON OXYNITRIDE THIN FILMS; SINGLE ELECTRON STATE; TWO ELECTRON STATE;

SILICON NITRIDE;

SILICON NITRIDE; SILICON OXYNITRIDE; UNCLASSIFIED DRUG;

CONFERENCE PAPER; PRIORITY JOURNAL; SPECTROSCOPY;

EID: 0342502049     PISSN: 09277757     EISSN: None     Source Type: Journal    
DOI: 10.1016/0927-7757(96)03595-9     Document Type: Conference Paper

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