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Volumn 2991, Issue , 1997, Pages 267-272

Formation of Ti:sapphire thin films on single-crystal sapphire and GaAs substrates by pulsed laser deposition

Author keywords

Laser ablation; Laser plume; Thin films; Ti:sapphire

Indexed keywords

ABLATION; APPLICATIONS; CORUNDUM; DOPING (ADDITIVES); GALLIUM ALLOYS; LASER ABLATION; LASER APPLICATIONS; LASER PRODUCED PLASMAS; LASERS; PULSED LASER DEPOSITION; SAPPHIRE; SOLIDS; THIN FILMS;

EID: 0342466880     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.273735     Document Type: Conference Paper
Times cited : (1)

References (9)
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  • 5
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    • 3xide layers deposited on sapphire substrates
    • 3xide layers deposited on sapphire substrates", Appl. Phys. Lett. 65, pp.180-182, 1994.
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    • Yond, N.1    Nastasi, M.2
  • 6
    • 77956859576 scopus 로고    scopus 로고
    • Laser- ablated neodimium-doped garnet thin film waveguide lases
    • Ed. "Laser- ablated neodimium-doped garnet thin film waveguide lases", Laser Focus World 32(1) 9, 1996.
    • (1996) Laser Focus World , vol.32 , Issue.1 , pp. 9
    • Ed1
  • 7
    • 0028681893 scopus 로고
    • 7-x superconducting thin films with laser heating and annealing
    • 7-x superconducting thin films with laser heating and annealing", Vacuum 45, pp.1215-1219, 1994.
    • (1994) Vacuum , vol.45 , pp. 1215-1219
    • Atanasov, P.A.1    Tomov, R.I.2    Serbezov, V.S.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.