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Volumn 54, Issue 8, 1996, Pages 5763-5768

Exchanges between group-III (B, Al, Ga, In) and Si atoms on Si(111)× surfaces

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EID: 0342432842     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.54.5763     Document Type: Article
Times cited : (15)

References (33)
  • 8
    • 0009264377 scopus 로고
    • The obtained prefactors shown in this paper were incorrect. 2×(Formula presented) and 8×(Formula presented) should be changed to 2×(Formula presented) and 8×(Formula presented);
    • H. Hibino and T. Ogino, Surf. Sci. 328, L547 (1995). The obtained prefactors shown in this paper were incorrect. 2×(Formula presented) and 8×(Formula presented) should be changed to 2×(Formula presented) and 8×(Formula presented);H. Hibino and T. Ogino, Surf. Sci. (to be published).
    • (1995) Surf. Sci. , vol.328 , pp. L547
    • Hibino, H.1    Ogino, T.2
  • 18
    • 36849130600 scopus 로고
    • Properties of Silicon (INSPEC, The Institute of Electrical Engineers, London, 1988). For the activation energy of In diffusion, we have not shown the value listed in C. S. Fuller and J. A. Ditzenberger, J. Appl. Phys. 27, 544 (1956), but we have shown the value recalculated from their original data.
    • (1956) J. Appl. Phys. , vol.27 , pp. 544
    • Fuller, C.1    Ditzenberger, J.2
  • 23
    • 0000334925 scopus 로고
    • I.-S. Hwang and J. A. Golovchenko, Science 258, 1119 (1992).
    • (1992) Science , vol.258 , pp. 1119
    • Golovchenko, J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.