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Volumn 84, Issue 6, 1998, Pages 3349-3353

Barrier thickness dependence of the photoscreening of the piezoelectric field in (111) orientated GaAs-InxGa1-xAs double quantum wells

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EID: 0342429494 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.368491 Document Type: Article

Times cited : (2)

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