Charge collection at large angles of incidence

IEEE Transactions on Nuclear Science

Volumn 39, Issue 6, 1992, Pages 1622-1629

  McNulty, P J ^a   Beauvais, W J ^a   Reed, R A ^a   Roth, D R ^a   Stassinopoulos, E G ^b   Brucker, G J ^c  

^a CLEMSON UNIVERSITY   (United States)

^b NASA GODDARD SPACE FLIGHT CENTER   (United States)

^c NONE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0342393611     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.211344     Document Type: Article

References (8)

1. P.J. McNulty, “Predicting SEU Phenomena in Space” in 1990 IEEE Short Course Microelectronics for the Natural Radiation Environments of Space (IEEE-NPSS Nuclear Radiation Effects Committee, 1990) pp 3–1 to 3–93.
2. F. Sexton, “Measurement of Single Event Phenomena in Devices and ICs” in 1992 IEEE Short Course: Measurements and Analysis of Radiation Effects in Devices and ICs (IEEE-NPSS Radiation Effects Committee, 1992) pp 3–1 to 3–55.
3. E. L. Petersen, J. B. Langworthy, and S.E. Diehl, “Suggested Single Event Upset Figure of Merit”, IEEE Trans. Nucl. Sci., NS-30, No. 6, 4533–4539, Dec. (1983).
4. P.J. McNulty, W.J. Beauvais, and D.R. Roth, “Determination of SEU Parameters of CMOS SRAMs by Charge Collection Measurements”, IEEE Trans. Nucl. Sci., NS-38, No. 6, 1463–1470, Dec. (1991).
5. P.J. McNulty, D.R. Roth, W.J. Beauvais, and W.G. Abdel-Kader, “Charge Collection Spectroscopy Applied to MOS RAMs”, in Proceedings of the 1991 Single Event Upset Symposium, T. Cousins, Ed. (Defense Research Establishment Ottawa, 1991) pp 3.1–1 to 3.1–13.
6. P.J. McNulty, D.R. Roth, W.J. Beauvais, W.G. Abdel-Kader, and D.C. Dinge, “Comparison of the Charge Collecting Properties of Junctions and the SEU Response of Microelectronic Circuits” Int. J. Radiat. Instrum., Part D, Nucl. Tracks Radiat. Meas., 19, Nos. 1–4, 929–938 (1991).
7. P. J. McNulty, W.G. Abdel-Kader, and J.E. Lynch, “Modeling Charge Collection and Single Event Upsets in Microelectronics”, Nuclear Instruments and Methods in Physics Research, B61, No. 1, 52–60, (1991).
8. P.J. McNulty, W.J. Beauvais, D.R. Roth, J.E. Lynch, A.R. Knudson, and W.J. Stapor, “Microbeam Analysis of MOS circuits”, in RADECS 91, First European Conference on Radiation and Its Effects on Devices and Systems, J.P. Charles, L. Adams, and A. Holmes-Siedle, Eds. (IEEE, Piscataway, NJ, 1991) pp 435 – 439.