Highly selective reactive-ion etching using CO/NH3/Xe gases for microstructuring of Au, Pt, Cu, and 20% Fe-Ni

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 5, 2003, Pages 2159-2162

  Abe, Takashi ^a,b   Hong, Youn Gi ^a   Esashi, Masayoshi ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTIVE METALS; MAGNETIC METAL; MOLAR RATIO; PERMALLOY;

ADDITION REACTIONS; CONDUCTIVE MATERIALS; DRY ETCHING; GASES; MAGNETIC MATERIALS; MASKS; METALLOGRAPHIC MICROSTRUCTURE; PERMANENT MAGNETS; X RAY PHOTOELECTRON SPECTROSCOPY;

REACTIVE ION ETCHING;

EID: 0242677559     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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