Deposition and Characterization of Polycrystalline Silicon Thin-Films by Reactive Thermal Chemical Vapour Deposition at 450°C

Solid State Phenomena

Volumn 93, Issue , 2003, Pages 281-286

  Lee, J W ^a   Shimizu, K ^a   Hanna, J ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Polycrystalline Silicon; Reactive Thermal Chemical Vapor Deposition; Residence Time; Surface Reaction

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; ELECTRIC CONDUCTIVITY; FLUORINE; POLYCRYSTALLINE MATERIALS; SILICON; SUBSTRATES; THERMAL EFFECTS;

HYDROGEN PASSIVATION;

THIN FILMS;

EID: 0242665686     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/ssp.93.281     Document Type: Conference Paper

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