Analytical solution of the breakdown voltage for 6H-silicon carbide p+n junction

Journal of Applied Physics

Volumn 79, Issue 5, 1996, Pages 2796-2797

  Byeon, Dae Seok ^a   Han, Min Koo ^a   Choi, Yearn Ik ^b  

^a Seoul National University   (South Korea)

^b Ajou University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0242664443     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.361113     Document Type: Article

References (8)

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