Uniform acceptor distribution in neutron transmutation doped far-infrared p-Ge lasers

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5087, Issue , 2003, Pages 133-140

  Nelson, E W ^a   Dolguikh, M V ^a   Flitsiyan, E S ^a   Muravjov, A V ^a   Peale, R E ^a   Kleckley, S H ^b   Vernetson, W G ^c   Tsipin, V Z ^d  

^a UNIVERSITY OF CENTRAL FLORIDA   (United States)

^b Zaubertek Inc   (United States)

^c UNIVERSITY OF FLORIDA   (United States)

^d S YU YUNUSOV INSTITUTE OF THE CHEMISTRY OF PLANT SUBSTANCES   (Uzbekistan)

Author keywords

Far infrared; Neutron Transmutation Doping; P Germanium; Semiconductor Laser; Sub millimeter; Terahertz

Indexed keywords

CARRIER CONCENTRATION; CRYSTALS; DOPING (ADDITIVES); ELECTRIC FIELD EFFECTS; LASER PULSES; NEUTRON ACTIVATION ANALYSIS;

NEUTRON TRANSMUTATION DOPING;

SEMICONDUCTOR LASERS;

EID: 0242635619     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.485798     Document Type: Conference Paper

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