A Simple Theoretical Analysis of the Effective Electron Mass in Heavily Doped III-V Semiconductors in the Presence of Band-Tails

Physica Scripta

Volumn 68, Issue 5, 2003, Pages 368-373

  Chakraborty, P K ^a   Datta, G C ^b   Ghatak, K P ^b  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

^b UNIVERSITY OF CALCUTTA   (India)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; ELECTRON MOBILITY; ELECTRON TRANSPORT PROPERTIES; ELECTRONIC DENSITY OF STATES; FERMI LEVEL; SEMICONDUCTOR DOPING;

ELECTRON MASSES;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0242611655     PISSN: 00318949     EISSN: None     Source Type: Journal    
DOI: 10.1238/Physica.Regular.068a00368     Document Type: Article

References (26)

1. Adachi, S., J. Appl. Phys., 58, R11 (1985).
2. Dornhaus, R. and Nimtz, G., "Springer Tracts in Modern Physics," Vol. 78, (Berlin-Heidelberg, N., Springer, 1, 1976).
3. Zawadzki, W., "Handbook of Semiconductor Physics," (Paul, W., ed.), Vol. 1, (Amsterdam, North Holland, 719, 1982).
4. Tsidilkovski, I. M., Cand. Thesis Leningrad University SSR (1955).
5. Bass, F. G. and Tsidilkovski, I. M., Ivz. Acad. Nauk Azerb. SSR 10, 3 (1966).
6. Aora, V. K. and Jeafarian, H., Phys. Rev. B13, 4457 (1976).
7. Ghatak, K. P. and Mondai, M., Z. F. Physik B69, 471 (1988); Mondal, M. and Ghatak, K.P., Phys. Lett. 131A, 529 (1988); Mitra, B. and Ghatak, K. P., Solid State Electron 32, 515 (1989); Ghatak, K. P., Ghatak, A. and Mitra, B., Nouvo Cimento 14D, 903 (1992).
8. Ghatak, K. P. and Mondai, M., Z. F. Physik B69, 471 (1988); Mondal, M. and Ghatak, K.P., Phys. Lett. 131A, 529 (1988); Mitra, B. and Ghatak, K. P., Solid State Electron 32, 515 (1989); Ghatak, K. P., Ghatak, A. and Mitra, B., Nouvo Cimento 14D, 903 (1992).
9. Ghatak, K. P. and Mondai, M., Z. F. Physik B69, 471 (1988); Mondal, M. and Ghatak, K.P., Phys. Lett. 131A, 529 (1988); Mitra, B. and Ghatak, K. P., Solid State Electron 32, 515 (1989); Ghatak, K. P., Ghatak, A. and Mitra, B., Nouvo Cimento 14D, 903 (1992).
10. Ghatak, K. P. and Mondai, M., Z. F. Physik B69, 471 (1988); Mondal, M. and Ghatak, K.P., Phys. Lett. 131A, 529 (1988); Mitra, B. and Ghatak, K. P., Solid State Electron 32, 515 (1989); Ghatak, K. P., Ghatak, A. and Mitra, B., Nouvo Cimento 14D, 903 (1992).
11. Singh, M., Wallace, P. R., Jog, S. D. and Frushanov, J., J. Phys. Chem. Solids 45, 409 (1984).
12. Zawadzki, W., Adv. Phys. 23, 435 (1974).
13. Ghatak, K. P. and Biswas, S. N., Nonlinear Opt. 12, 83 (1995).
14. Bhattacharya, D. and Ghatak, K. P., Phys. Stat. Sol. (b) 187, 523 (1995).
15. Nasledov, D. N., J. Appl. Phys. Suppl. 32, 2140 (1961).
16. Raymond, A., Robert, J. L. and Bernard, C., Phys. C. Solid State Phys. 12, 2289 (1979).
17. Nag, B. R., "Electron Transport in Compound Semiconductors," (Springer-Verlag, Berlin, 1980).
18. Kane, E. O., J. Phys. Chem. Solids. 1, 249 (1959).
19. Abram, R. A., Rees, G. J. and Wilson, B. L. H., Adv. Phys. 27, 799 (1978).
20. Willardson, R. K. and Beer, A. C., (Eds.), "Semiconductors and Semimetals," Vol. 1, (Academic Press, New York, 102, 1966).
21. Mitra, B., Basu, D. K., Nag, B. and Ghatak, K. P., Nonlinear Opt. 17, 171 (1997).
22. Shklovskii, B. I. and Efros, A. L., "Electronic Properties of Doped Semiconductors," Vol. 45. (Springer-Verlag, Berlin, 256, 1984).
23. Kane, E. O., Phys. Rev. 131, 79 (1963); Phys. Rev. 139, 343 (1965).
24. Kane, E. O., Phys. Rev. 131, 79 (1963); Phys. Rev. 139, 343 (1965).
25. Kane, E. O., Solid State Electron. 28, 3 (1985).
26. Abramowitz, M. and Stegun, I. A., "Handbook of Mathematical Functions with Formulas, Graphs and Mathematical Tables," (John Wiley and Sons. New York, 1964).