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Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 193-196

The Effect of Thermal Gradients on SiC Wafers

(3) Hallin, Christer a Joelsson, Torbjörn a Janzén, Erik a

a LINKÖPING UNIVERSITY (Sweden)

Author keywords

Curvature; Thermal Strain

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; HEAT TREATMENT; SILICON WAFERS; THERMAL GRADIENTS;

POLISHING INDUCED STRESS;

SILICON CARBIDE;

EID: 0242581462 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.433-436.193 Document Type: Conference Paper

Times cited : (2)

References (5)

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2
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3
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- (2002) Mat. Sci. Forum , vol.389-393 , pp. 1259
- Lendenmann, H.¹ Dahlquist, F.² Bergman, J.P.³ Bleichner, H.⁴ Hallin, C.⁵

4
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- G.G. Stoney: Proc. Roy. Soc. London Vol. A82 (1909), p. 172
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- Stoney, G.G.¹

5
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- J.L. Demenet, M.H. Hong and P. Pirouz: Mat. Sci. Forum Vol. 338-342 (2000), p. 517
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.