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Volumn 260, Issue 1-2, 2004, Pages 28-42
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Three-dimensional oscillatory flow in a thin annular pool of silicon melt
c
NEC CORPORATION
(Japan)
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Author keywords
A1. Computer simulation; A1. Convection; A1. Fluid flows; A2. Czochralski method; A2. Microgravity conditions; B2. Semiconducting silicon
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Indexed keywords
BUOYANCY;
COMPUTER SIMULATION;
HEAT FLUX;
SILICON;
OSCILLATORY FLOWS;
THIN ANNULAR POOL;
CRYSTAL GROWTH FROM MELT;
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EID: 0242580944
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2003.08.017 Document Type: Article |
Times cited : (107)
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References (28)
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