Residual stress behavior in methylsilsesquioxane-based dielectric thin films

Molecular Crystals and Liquid Crystals Science and Technology Section A: Molecular Crystals and Liquid Crystals

Volumn 371, Issue , 2001, Pages 397-402

  Oh, W ^a   Shin, T J ^a   Ree, M ^a   Jin, M Y ^b   Char, K ^c  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Korea Research Institute of Chemical Technology   (South Korea)

^c Seoul National University   (South Korea)

Author keywords

Crack; Craze; Low dielectric; Methylsilsesquioxane; Refractive index; Residual stress; Thermal stress; Thin film; X ray diffraction

Indexed keywords

EID: 0242558134     PISSN: 1058725X     EISSN: None     Source Type: Journal    
DOI: 10.1080/10587250108024768     Document Type: Article

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