Piezoelectricity of porous polytetrafluoroethylene single- and multiple-film electrets containing high charge densities of both polarities

Applied Physics A: Materials Science and Processing

Volumn 70, Issue 1, 2000, Pages 5-8

  Kunstler W ^a   Xia, Z ^a,b   Weinhold, T ^a   Pucher, A ^a   Gerhard Multhaupt, R ^a  

^a UNIVERSITY OF POTSDAM   (Germany)

^b TONGJI UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC IMPEDANCE; CARRIER CONCENTRATION; ELECTRETS; ELECTRIC SHIELDING; POLYTETRAFLUOROETHYLENES; TEMPERATURE;

ELEVATED TEMPERATURE; HIGH CHARGE DENSITIES; QUASI STATIC DIRECT PIEZOELECTRIC COEFFICIENT; TWO STEP CORONA CHARGING;

PIEZOELECTRICITY;

EID: 0242533092     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390050002     Document Type: Article

References (21)

1. G.M. Sessler, R. Gerhard-Multhaupt (Eds.): Electrets, 3rd ed. in 2 vols. (Laplacian Press, Morgan Hill, CA, USA 1999) in particular chapters 3 and 7-10
2. R. Hayakawa, Y. Wada: Rep. Progr. Polym. Phys. Japan 14, 467 (1971)
3. R. Hayakawa, Y. Wada: Adv. Polym. Sci. 11, 1 (1973)
4. R. Hayakawa, Y. Wada: Rep. Progr. Polym. Phys. Japan 19, 321 (1976)
5. G. Dreyfus, J. Lewiner: Piezoelectricity induced by charge injection in thin polymer films In M.M. Perlman (Ed.): Electrets, Charge Storage and Transport in Dielectrics (Electrochem. Soc., Princeton, NJ, USA 1973) p. 517-528
6. J.J. Crosnier, F. Micheron, G. Dreyfus, J. Lewiner: J. Appl. Phys. 47, 4798 (1976)
7. R.M. Faria: Appl. Phys. Lett. 69, 1972 (1996)
8. K. Kirjavainen: Electromechanical film and procedure for manufacturing same, U.S. Patent 4, 654,546 (1987)
9. M. Paajanen, H. Välimäki, J. Lekkala: Proc. 10th Int. Symp. Electrets: IEEE Rep. No. 99CH36256 (IEEE, New York, NY, USA 1999) p. 735-738 and references therein
10. J. Lekkala, M. Paajanen: Proc. 10th Intern. Symp. Electrets: IEEE Rep. No. 99CH36256 (IEEE, New York, NY, USA 1999) p. 743-746 and references therein
11. G.M. Sessler, J. Hillenbrand: Proc. 10th Intern. Symp. Electrets: IEEE Rep. No. 99CH36256 (IEEE, New York, NY, USA 1999) p. 261-264
12. J. van Turnhout, R.E. Staal, M. Wübbenhorst, P. de Haan: Proc. 10th Intern. Symp. Electrets: IEEE Rep. No. 99CH36256 (IEEE, New York, NY, USA 1999) p. 785-788 and references therein
13. J. Hillenbrand, G.M. Sessler: Annu. Rep., Conf. Electr. Insul. Diel. Phenom. (IEEE, New York, NY, USA 1999) p. 43-46
14. C. Hennion, J. Lewiner: J. Acoust. Soc. Am. 63, 1229 (1978)
15. R. Kacprzyk. E. Motyl, J.B. Gajewski, A. Pasternak: J. Electrostatics 35, 161 (1995)
16. R. Kacprzyk, A. Dobrucki, J.B. Gajewski: J. Electrostatics 39, 33 (1997)
17. Z. Xia, J. Jian, Y. Zhang, Y. Cao, Z. Wang: Annu. Rep., Conf. Electr. Insul. Diel. Phenom., IEEE Rep. No. 97CH36046 (IEEE, New York, NY, USA 1997) p. 471-474
18. Z. Xia, R. Gerhard-Multhaupt, W. Künstler, A. Wedel, R. Danz: J. Phys. D: Appl. Phys. 32, L83 (1999)
19. Z. Xia, A. Wedel, R. Danz: Proc. 10th Intern. Symp. Electrets: IEEE Rep. No. 99CH36256 (IEEE, New York, NY, USA 1999) p. 23-26
20. R. Gerhard-Multhaupt, Z. Xia, W. Künstler, A. Pucher: Proc. 10th Intern. Symp. Electrets: IEEE Rep. No. 99CH36256 (IEEE, New York, NY, USA 1999) p. 273-276
21. G.S. Neugschwandtner, R. Schwödiauer, S. Bauer-Gogonea, S. Bauer: Appl. Phys. A 70, 1 (2000)