Single-electron devices formed by thermal oxidation

Journal of Electroanalytical Chemistry

Volumn 559, Issue , 2003, Pages 19-23

  Nagase, M ^a   Horiguchi, S ^a   Shiraishi, K ^a,b   Fujiwara, A ^a   Takahashi, Y ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

Band gap reduction; Pattern dependent oxidation; Quantum confinement effect; Scanning electron microscopy; Single electron device; Transmission electron microscopy

Indexed keywords

QUANTUM THEORY; SCANNING ELECTRON MICROSCOPY; SILICON; THERMOOXIDATION; TRANSMISSION ELECTRON MICROSCOPY;

SINGLE-ELECTRON DEVICES;

ELECTROCHEMISTRY;

EID: 0242489289     PISSN: 15726657     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0728(03)00420-0     Document Type: Conference Paper

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