High-brightness highly-reliable InGaAlAs/GaAs laser bars with reduced fill factor and 60% efficiency

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4973, Issue , 2003, Pages 1-9

  Schmitt, A ^a   Behringer, M ^a   Herrmann, G ^a   Philippens, M ^a   Heerlein, J ^a   Luft, J ^a  

^a OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

Author keywords

High brightness; High power diode laser bars; Lifetime; Price projection

Indexed keywords

EXTRAPOLATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

LASER BARS;

SEMICONDUCTOR LASERS;

EID: 0242469230     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.478364     Document Type: Conference Paper

References (6)

1. After P.Loosen, Fraunhofer Institute for Laser Technology, Aachen.
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3. M. Behringer et al., Proceedings of Lamp 2002, Osaka, Japan.
4. J. Leger. in Diode Laser Arrays, D. Botez, and D.R. Scifres, Eds., 1994, Cambridge University Press
5. M. Behringer et al., "More Brilliance from High Power Laser Diodes", to be published in Proceedings of Photonics West 2003, San Jose, US.
6. Kintzer et al., "High-power, strained-layer amplifiers and lasers with tapered gain regions", IEEE Photon. Tech. Lett., vol.5, 1993.