Growth of high-K silicon oxynitride thin films by means of a pulsed laser deposition-atomic nitrogen plasma source hybrid system for gate dielectric applications

Journal of Applied Physics

Volumn 94, Issue 9, 2003, Pages 5969-5975

  Desbiens, E ^a   El Khakani, M A ^a  

^a INRS EMT   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; NITROGEN; PARTIAL PRESSURE; PLASMAS; PULSED LASER DEPOSITION; SILICON COMPOUNDS;

GATE DIELECTRICS;

THIN FILMS;

EID: 0242468510     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1616636     Document Type: Article

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