Photoinduced transient spectroscopy of deep levels in GaAs/Ga1-xAlxAs multiple quantum wells

Journal of Applied Physics

Volumn 82, Issue 10, 1997, Pages 4986-4989

  Arikan, M C ^a,b   Cenk, S ^c   Balkan, N ^d  

^a ISTANBUL UNIVERSITY   (Turkey)

^b SCIENTIFIC AND TECHNOLOGICAL RESEARCH COUNCIL OF TURKEY   (Turkey)

^c MATERIALS INSTITUTE   (Turkey)

^d UNIVERSITY OF ESSEX   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CAPTURE CROSS SECTIONS; CONVENTIONAL TECHNIQUES; DEEP LEVEL; EMISSION DYNAMICS; HIGH-SPEED OPERATION; MULTIPLE QUANTUM WELLS; MULTIPLE QUANTUM-WELL STRUCTURES; PHOTO-INDUCED; QUANTUM WELL STRUCTURES; TRANSIENT SPECTROSCOPY; TRAPPING CENTERS; TRAPPING LEVELS;

ACTIVATION ENERGY; ALUMINUM; OPTOELECTRONIC DEVICES; SEMICONDUCTOR DEVICE STRUCTURES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0242417256     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366366     Document Type: Article

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