Theoretical Study of the Atomic and Electronic Structure of Grain Boundaries in SiC

Solid State Phenomena

Volumn 93, Issue , 2003, Pages 387-392

  Kohyama, Masanori ^a   Tanaka, Koji ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Electron Microscopy; Electronic Structure; First Principles Calculation; Grain Boundary; Silicon Carbide

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON MICROSCOPY; ELECTRONIC STRUCTURE; GRAIN BOUNDARIES; INTERFACES (MATERIALS); PROBABILITY DENSITY FUNCTION; STOICHIOMETRY; THERMODYNAMIC PROPERTIES;

FIRST-PRINCIPLES CALCULATIONS;

SILICON CARBIDE;

EID: 0242412966     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/ssp.93.387     Document Type: Conference Paper

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