Gap closure in semiconducting APtSn cubic compounds (A = U, Th or Zr)

Philosophical Magazine

Volumn 83, Issue 10, 2003, Pages 1235-1253

  Troc R ^a   Strydom, A M ^b   Du Plessis, P DeV ^c   Tran, V H ^a   Czopnik, A ^a   Cockroft, J K ^d  

^a INSTITUTE OF LOW TEMPERATURE AND STRUCTURE RESEARCH   (Poland)

^b UNIVERSITY OF JOHANNESBURG   (South Africa)

^c UNIVERSITY OF THE WITWATERSRAND   (South Africa)

^d HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC DENSITY OF STATES; LATTICE CONSTANTS; MAGNETIC SUSCEPTIBILITY; NEUTRON DIFFRACTION; SPECIFIC HEAT; THERMAL EXPANSION;

BANDGAP FORMATION;

INTERMETALLICS;

EID: 0242380181     PISSN: 14786435     EISSN: None     Source Type: Journal    
DOI: 10.1080/0141861031000069118     Document Type: Article

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