Coherent “metallic” resistance and medium localization in a disordered one-dimensional insulator

Physical Review Letters

Volumn 91, Issue 13, 2003, Pages

  Moško, Martin ^a,b   Vagner, Pavel ^a,b   Bajdich, Michal ^a   Schäpers, Thomas ^b  

^a INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; POLYNOMIALS; RESONANT TUNNELING;

THERMAL SMEARING;

ELECTRIC INSULATORS;

EID: 0242321303     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.91.136803     Document Type: Article

References (14)

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12. The two-terminal resistance (Formula presented) includes the contact resistance, while Eq.� 9 is the resistance of disorder, measurable by four probes. Equation 9 ignores the effect of measurement probes [M. Büttiker, IBM J. Res. Dev. 32, 72 (1988)], but one can see that for disordered wires the problem is not serious. First, if presented in terms of (Formula presented), the mean resistance and resistance distribution in Fig.� 4 remain the same except for a constant shift by the value of the contact resistance (the (Formula presented) at (Formula presented)). Second, the resistance of disorder can be well estimated from the measured (Formula presented) by subtracting the contact resistance.
13. M.?Ya. Azbel and D.P. DiVincenzo, Phys. Rev. B 30, 6877 (1984), studied the same regime at temperatures too low ((Formula presented)) to see the effects discussed by us.10.1103/PhysRevB.30.6877
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