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Volumn 10, Issue 10, 2002, Pages 455-460

Improved high-field laser characteristics of a diode-pumped Yb:LiYF 4 crystal at low temperature

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); LIGHT ABSORPTION; LIGHT EMISSION; LOW TEMPERATURE EFFECTS; OPTICAL PUMPING; OSCILLATORS (ELECTRONIC); SEMICONDUCTOR DIODES;

EID: 0242312822     PISSN: 10944087     EISSN: None     Source Type: Journal    
DOI: 10.1364/OE.10.000455     Document Type: Article
Times cited : (59)

References (17)
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    • K. Yamakawa, M. Aoyama, S. Matsuoka, T. Kase, Y. Akahane and H. Takuma, "100-TW sub-20-fs Ti:sapphire laser system operating at a 10-Hz repetition rate," Opt. Lett. 23, 1468-1470 (1998).
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    • U. Brauch, A. Giesen, M. Karszewski, Chr. Stewen and A. Voss, "Multiwatt diode-pumped Yb:YAG thin disk laser continuously tunable between 1018 and 1053 nm," Opt. Lett. 20, 713-715 (1995).
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    • Brauch, U.1    Giesen, A.2    Karszewski, M.3    Stewen, Chr.4    Voss, A.5
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    • 69-W-average-power Yb:YAG laser
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    • Directly diode-pumped millijoule subpicosecond Yb:glass regenerative amplifier
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.