Material properties of CuGaSe2 absorber films prepared by rapid thermal annealing of stacked elemental layers

Journal of Physics D: Applied Physics

Volumn 36, Issue 20, 2003, Pages 2531-2537

  Klenk, M ^a   Schenker, O ^a   Alberts, V ^b   Probst, U ^a   Bucher, E ^a  

^a UNIVERSITY OF KONSTANZ   (Germany)

^b UNIVERSITY OF JOHANNESBURG   (South Africa)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER COMPOUNDS; GALLIUM; GLASS; POLYCRYSTALLINE MATERIALS; RAPID THERMAL ANNEALING; REACTION KINETICS; SELENIUM; STOICHIOMETRY; TEMPERATURE;

ABSORBER FILMS; CHALCOPYRITE; CRYSTALLINITY; STACKED ELEMENTAL LAYERS; X-RAY FLUORESCENCE;

THIN FILMS;

EID: 0242305193     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/36/20/016     Document Type: Article

References (6)

1. Contreras M A, Egaas B, Ramanathan K, Hiltner J, Swartzlander A, Haason F and Noufi R 1999 Prog. Photovolt. Res. Appl. 7 311
2. Nadenau V, Hariskos D and Schock H W 1997 Proc. 14th Eur. Photovoltaic Solar Energy Conf. (Barcelona) p 1250
3. Klenk R 1993 PhD Dissertation University of Stuttgart
4. Klenk M, Schenker O, Prosbst U and Bucher E 1999 Sol. Energy Mater. Solar Cells 58 299
5. Alberts V, Klenk M and Bucher E 2000 Sol. Energy Mater. Solar Cells 64 371
6. Albin D C, Mooney G D, Duda A, Tuttle J, Matson R and Noufi R 1991 Sol. Cells 30 47