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Volumn 512, Issue 1-2, 2003, Pages 408-411

Silicon detectors for γ-ray and β-spectroscopy

Author keywords

Depletion region; Si(Li) detectors; Silicon

Indexed keywords

GAMMA RAYS; IMPURITIES; OXYGEN; SILICON; SPECTROMETRY;

EID: 0142180212     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(03)01919-3     Document Type: Conference Paper
Times cited : (6)

References (4)
  • 3
    • 4243762657 scopus 로고
    • Lithium-ion drifting: Application to the study of point defects in floating-zone silicon
    • Proceedings of the 18th International Conference on Defects in Semiconductors, Trans. Techn. Publications, Switzerland
    • W.B. Knowlton, J.T. Walton, J.S. Lee, Y.K. Wong, E.E. Haller, W.Von Ammon, W. Zulehner, Lithium-ion drifting: application to the study of point defects in floating-zone silicon, Proceedings of the 18th International Conference on Defects in Semiconductors, Material Science Forum, Vol. 196-201, Trans. Techn. Publications, Switzerland, 1995, p. 1776.
    • (1995) Material Science Forum , vol.196-201 , pp. 1776
    • Knowlton, W.B.1    Walton, J.T.2    Lee, J.S.3    Wong, Y.K.4    Haller, E.E.5    Von Ammon, W.6    Zulehner, W.7


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.