Characterization of optically active defects created by noble gas ion bombardment of silicon

Journal of Applied Physics

Volumn 83, Issue 8, 1998, Pages 4075-4080

  Deenapanray, P N K ^a   Perret, N E ^a   Brink, D J ^a   Auret, F D ^a   Malherbe, J B ^a  

^a UNIVERSITY OF PRETORIA   (South Africa)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0142137401     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.367227     Document Type: Article

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