Room temperature X- and gamma-ray spectroscopy with silicon drift detectors

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4141, Issue 1, 2000, Pages 29-47

  Strueder L ^a,e   Hartmann, R ^a,e   Kemmer, S ^a,e   Krause, N ^a,e   Stoetter D ^a,e   Lutz, G ^b,e   Solc, P ^b,e   Holl, P ^c,e   Lechner, P ^c,e   Leutenegger, P ^c,e   Kemmer, J ^c,e   Soltau, H ^c,e   Stoetter R ^c,e   Weber, U ^c,e   Castoldi, A ^d   Fiorini, C ^d   Gatti, E ^d   Guazzoni, C ^d   Longoni, A ^d   Sampietro, M ^d  

^a MAX PLANCK INSTITUT FÜR EXTRATERRESTRISCHE PHYSIK   (Germany)

^b MAX PLANCK INSTITUT FÜR PHYSIK   (Germany)

^c KETEK GMBH   (Germany)

^d POLITECNICO DI MILANO   (Italy)

^e MPI HALBLEITERLABOR   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; COOLING; GAMMA RAYS; INTEGRATED CIRCUITS; LEAKAGE CURRENTS; SEMICONDUCTING SILICON; THERMOELECTRICITY; TRANSISTORS; X RAY SPECTROSCOPY;

INTEGRATED READOUT TRANSISTORS; SILICON DRIFT DETECTORS (SDDS);

DRIFT CHAMBERS;

EID: 0142095811     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.407602     Document Type: Article

References (0)