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Volumn 512, Issue 1-2, 2003, Pages 332-340

Evaluation of testing strategies for the radiation tolerant ATLAS n +-in-n pixel sensor

Author keywords

ATLAS; Interface damage; Pixel sensor; Quality assurance; Silicon detector

Indexed keywords

CHARGED PARTICLES; RADIATION; SILICON; SUBSTRATES;

EID: 0142095114     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(03)01911-9     Document Type: Conference Paper
Times cited : (3)

References (13)
  • 4
    • 4243285403 scopus 로고    scopus 로고
    • Electrical characteristics of silicon pixel sensors
    • ATL-INDET-2001-011, Geneva, October, submitted
    • I. Gorelov, et al., Electrical characteristics of silicon pixel sensors, ATL-INDET-2001-011, Geneva, October 2001, Nucl. Instr. and Meth. A, submitted.
    • (2001) Nucl. Instr. and Meth. A
    • Gorelov, I.1
  • 12
    • 23544438469 scopus 로고    scopus 로고
    • Surface effects of different oxides before and after ionisation induced surface damage
    • Louvain-la-Neuve, September
    • J. Wüstenfeld, et al., Surface effects of different oxides before and after ionisation induced surface damage, Proceedings of the RADECS Workshop, Louvain-la-Neuve, September 2000, pp. 199-204.
    • (2000) Proceedings of the RADECS Workshop , pp. 199-204
    • Wüstenfeld, J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.