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Physical Review B - Condensed Matter and Materials Physics

Volumn 53, Issue 24, 1996, Pages R16144-R16147

Etching of double-height-stepped Si(100)-2×1: Steps and their interactions

(3) Gong, Y a Owens, D a Weaver, J a

a UNIVERSITY OF MINNESOTA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0142071334 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.53.R16144 Document Type: Article

Times cited : (2)

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