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Journal of Applied Physics

Volumn 61, Issue 11, 1987, Pages 5110-5117

Titanium disilicide formation on heavily doped silicon substrates

(3) Beyers, Robert a Coulman, Don b Merchant, Paul b

a STANFORD UNIVERSITY (United States)

b HEWLETT PACKARD LABORATORIES (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0142047692 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.338337 Document Type: Article

Times cited : (107)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.