Interfacial Anodic Behaviors of n- and p-GaAs Semiconductors in Liquid Ammonia at 223 K

Journal of the Electrochemical Society

Volumn 150, Issue 10, 2003, Pages

  Seitz, O ^a   Mathieu, C ^a   Goncalves A M ^a   Herlem, M ^a   Etcheberry, A ^a  

^a UNIVERSITÉ DE VERSAILLES SAINT QUENTIN EN YVELINES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACIDITY; ADSORPTION; AMMONIA; ANODES; CYCLIC VOLTAMMETRY; DISSOLUTION; ELECTRIC CURRENTS; ELECTROCHEMISTRY; OXIDATION; PRECIPITATION (CHEMICAL); REDUCTION;

ACIDIC MEDIA;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0142021048     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1603249     Document Type: Article

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