Electronic Structure of Al2O3 Thin Film Studied Using First-Principle Band Calculation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 8, 2003, Pages 5185-5186

  Shiiki, Kazuo ^a   Igarashi, Masaaki ^a   Kaijyu, Hideo ^a  

^a KEIO UNIVERSITY   (Japan)

Author keywords

Al2O3; Band calculation; Tunneling junction

Indexed keywords

ELECTRONIC STRUCTURE; THIN FILMS; TUNNEL JUNCTIONS;

BAND CALCULATIONS;

ALUMINUM COMPOUNDS;

EID: 0142012121     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.5185     Document Type: Article

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