Microwave dielectric properties of B2O3 doped LaAlO3 ceramics at low sintering temperature

Journal of Materials Science

Volumn 38, Issue 16, 2003, Pages 3495-3500

  Hsu, Cheng Shing ^a   Huang, Cheng Liang ^a   Chiang, Kuo Hau ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CERAMIC MATERIALS; DENSIFICATION; DIELECTRIC PROPERTIES; DOPING (ADDITIVES); LANTHANUM COMPOUNDS; METALLOGRAPHIC MICROSTRUCTURE; MICROWAVE DEVICES; NATURAL FREQUENCIES; PERMITTIVITY; SINTERING; TEMPERATURE;

BOUNDARY PHASES; LIQUID PHASE EFFECT; MICROWAVE DIELECTRIC PROPERTIES; SOLID STATE ROUTE; TEMPERATURE COEFFICIENT OF RESONANT FREQUENCY;

BORON COMPOUNDS;

EID: 0141975205     PISSN: 00222461     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1025113204419     Document Type: Article

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