Novel in-plane gate devices on hydrogenated diamond surfaces

Physica Status Solidi (A) Applied Research

Volumn 199, Issue 1, 2003, Pages 56-63

  Garrido, J A ^a   Nebel, C E ^a   Todt, R ^a   Amann, M C ^a   Williams, O A ^b   Jackman, R ^b   Nesladek M ^c   Stutzmann, M ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b UNIVERSITY COLLEGE LONDON   (United Kingdom)

^c HASSELT UNIVERSITY   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; FIELD EFFECT TRANSISTORS; HYDROGENATION; MODULATION;

SURFACE ELECTRONICS;

DIAMONDS;

EID: 0141956175     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200303823     Document Type: Conference Paper

References (12)

1. F. Maier, M. Riedel, B. Mantel, J. Ristein, and L. Ley, Phys. Rev. Lett. 85, 3472 (2000).
2. H. Kiyota, E. Matsushima, K. Sato, H. Okushi, T. Ando, M. Kamo, Y. Sato, and M. Iida, Appl. Phys. Lett. 67, 3596 (1995).
3. H. Kawarada, M. Aoki, H. Sasaki, and M. Ito, Appl. Phys. Lett. 65, 1563 (1994).
4. P. Gluche, A. Aleksov, A. Vescan, W. Ebert, and E. Kohn, IEEE Electron Device Lett. 18, 547 (1997).
5. J. A. Garrido, C. E. Nebel, E. Snidero, P. Bergonzo, and M. Stutzmann Appl. Phys. Lett. 81, 637 (2002).
6. C. E. Nebel, C. Sauerer, F. Ertl, C. F. O. Graeff, P. Bergonzo, O. A. Williams, R. Jackman, and M. Stutzmann, Appl. Phys. Lett. 79, 4541 (2001).
7. J. A. Garrido, C. E. Nebel, R. Todt, G. Rösel, M.-C. Amann, E. Snidero, P. Bergonzo, and M. Stutzmann, Appl. Phys. Lett. 82 (6), 988 (2003).
8. A. D. Wieck, K. Ploog, Appl. Phys. Lett. 56, 928 (1990).
9. H. Hasegawa, T. Hashizume, H. Okada, and K. Jinushi, J. Vac. Sci. Technol. B 13 (4), 1744 (1995).
10. L. Reggiani, S. Bosi, C. Canali, F. Nava, and S. F. Kozlov, Phys. Rev. B 23, 3050 (1981).
11. K. Hess, H. Morkoc, H. Shichijo, and B. G. Streetman, Appl. Phys. Lett. 35, 469 (1979).
12. M. Keever, H. Shichijo, K. Hess, S. Banerjee, L. Witkowski, H. Morkoc, and B. G. Streetman, Appl. Phys. Lett. 38, 36 (1981).