Laser-induced ultraviolet absorption and refractive index changes in Ge-B-SiO2 planar waveguides by inductively coupled plasma-enhanced chemical vapor deposition

Chemical Physics Letters

Volumn 379, Issue 5-6, 2003, Pages 534-538

  Zhang, Q Y ^a   Pita, K ^a   Tjin, S C ^a   Kam, C H ^a   Zuo, L P ^b   Takahashi, S ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b HOYA Photonics Singapore Pte Ltd   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; GERMANIUM; SILICON DIOXIDE;

ARTICLE; CHEMICAL ANALYSIS; CHEMICAL BOND; HYDROGENATION; LASER; LIGHT ABSORPTION; REFRACTION INDEX; SPECTRAL SENSITIVITY; TECHNIQUE; VAPOR;

EID: 0141838587     PISSN: 00092614     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cplett.2003.08.076     Document Type: Article

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