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Volumn 53, Issue 19, 1996, Pages 12581-12584

Intraband inversion due to ultrashort carrier lifetimes in proton-bombarded InP

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EID: 0141761023     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.53.12581     Document Type: Article
Times cited : (3)

References (26)
  • 4
    • 0028304539 scopus 로고
    • J. Faist et. al Science 264, 553 (1994).
    • (1994) Science , vol.264 , pp. 553
    • Faist, J.1
  • 19
    • 0004200984 scopus 로고
    • For a review on trapping and recombination centers, see, e.g., Deep Centers in Semiconductors, edited by S. Pantelides (Gordon and Breach, New York, 1992).
    • (1992) Deep Centers in Semiconductors


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.