Simulation of scattering from defects in EUV mask blanks

2002 International Microprocesses and Nanotechnology Conference, MNC 2002

Volumn , Issue , 2002, Pages 316-317

  Ito, M ^a   Tezuka, Y ^a   Terasawa, T ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; ELECTROMAGNETIC FIELDS; EXTREME ULTRAVIOLET LITHOGRAPHY; INSPECTION; LIGHT; LIGHT SCATTERING; MASKS; MAXWELL EQUATIONS; MULTILAYERS; NANOTECHNOLOGY; PHOTOMASKS; TIME DOMAIN ANALYSIS;

AT-WAVELENGTH INSPECTION; EXTREME ULTRAVIOLETS; FINITE-ELEMENT DISCRETIZATION; LOCAL IRREGULARITIES; MASK BLANK INSPECTION; SIMULATION PROCEDURES; TIME-DOMAIN FINITE ELEMENT METHODS; TWO-DIMENSIONAL SIMULATIONS;

FINITE ELEMENT METHOD;

EID: 0141733049     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IMNC.2002.1178670     Document Type: Conference Paper

References (0)