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Volumn 5038 I, Issue , 2003, Pages 121-125

Overlay considerations for 300mm lithography

Author keywords

300mm; Lithography; Overlay; Process induced; Systematical overlay error

Indexed keywords

DYNAMIC RANDOM ACCESS STORAGE; PHOTOLITHOGRAPHY; PRODUCT DEVELOPMENT; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON WAFERS; SPECIFICATIONS; SYSTEMATIC ERRORS;

EID: 0141724476     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.485019     Document Type: Conference Paper
Times cited : (3)

References (10)
  • 2
    • 24444453835 scopus 로고    scopus 로고
    • Exposure field size considerations for yield
    • this issue
    • U.P. Schröder and G. Kunkel, "Exposure field size considerations for yield", this issue.
    • Schröder, U.P.1    Kunkel, G.2
  • 3
    • 0033699039 scopus 로고    scopus 로고
    • Interaction of pattern orientation and lens quality on CD and overlay errors
    • S. Bukofsky and C. Progler, "Interaction of Pattern Orientation and Lens quality on CD and Overlay Errors", Proc. SPIE 4000, 315 (2000)
    • (2000) Proc. SPIE , vol.4000 , pp. 315
    • Bukofsky, S.1    Progler, C.2
  • 10
    • 0036031521 scopus 로고    scopus 로고
    • Overlay registration target design for wafer-induced shift characterization
    • A.L. Ihochi and A.S. Wong, "Overlay Registration target design for wafer-induced shift characterization", Proc. SPIE 4689, 706 (2002)
    • (2002) Proc. SPIE , vol.4689 , pp. 706
    • Ihochi, A.L.1    Wong, A.S.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.