Optimization of tunneling magnetotransport and thermal properties in magnetic tunnel junctions by rapid thermal anneal

Microelectronic Engineering

Volumn 69, Issue 2-4, 2003, Pages 305-308

  Lee, K I ^a   Chae, K H ^a   Lee, J H ^a   Ha, J G ^b   Rhie, K ^c   Lee, W Y ^d   Shin, K H ^a  

^a Korea Institute of Science and Technology   (South Korea)

^b Kwangwoon University   (South Korea)

^c Korea University   (South Korea)

^d Yonsei University   (South Korea)

Author keywords

Magnetic random access memory (MRAM); Magnetic tunnel junctions (MTJs); Rapid thermal anneal (RTA)

Indexed keywords

ANNEALING; CMOS INTEGRATED CIRCUITS; OSCILLATIONS; PARAMETER ESTIMATION; PLASMA DIAGNOSTICS; SEMICONDUCTOR JUNCTIONS; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY; TUNNEL JUNCTIONS;

TUNNELING MAGNETOTRANSPORT;

IRON COMPOUNDS;

EID: 0141680900     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(03)00313-7     Document Type: Conference Paper

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