Comparative studies of p-type InP layers formed by Zn3As2 and Zn3P2 diffusion

Journal of Electronic Materials

Volumn 32, Issue 9, 2003, Pages 932-934

  Feng, Shiwei ^a   Hu, Jun ^a   Lu, Yicheng ^a   Yakshinskiy, Boris V ^b   Wynn, James D ^c   Ghosh, Chuni ^c  

^a RUTGERS UNIVERSITY   (United States)

^b RUTGERS UNIVERSITY   (United States)

^c Princeton Optronics Inc   (United States)

Author keywords

Absorption loss; InP; Optical transmittance; Zn diffusion

Indexed keywords

ANNEALING; ARSENIC; ATOMS; COMPOSITION; COMPUTER SOFTWARE; DIFFUSION; LIGHT TRANSMISSION; MONOCHROMATORS; OXIDES; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC COMPOUNDS;

ABSORPTION LOSS; INDIUM PHOSPHIDE WAFERS; OPTICAL POWER METER;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0141676013     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-003-0225-9     Document Type: Article

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