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Journal of Physics D: Applied Physics

Volumn 36, Issue 18, 2003, Pages 2230-2233

Preparation of ramp-type Josephson junctions using an Nd2CuO4 barrier

(2) So, S M a Gao, J a

a UNIVERSITY OF HONG KONG (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY; IRRADIATION; LATTICE CONSTANTS; MAGNETRON SPUTTERING; MICROWAVES; OXIDE SUPERCONDUCTORS; STRONTIUM COMPOUNDS; THERMAL EXPANSION; TRANSMISSION ELECTRON MICROSCOPY; YTTRIUM BARIUM COPPER OXIDES;

NEODYMIUM COPPER OXIDE; RADIO FREQUENCY MAGNETRON SPUTTERING; RAMP TYPE JOSEPHSON JUNCTIONS; STRONTIUM TITANATE;

JOSEPHSON JUNCTION DEVICES;

EID: 0141619408 PISSN: 00223727 EISSN: None Source Type: Journal
DOI: 10.1088/0022-3727/36/18/009 Document Type: Article

Times cited : (3)

References (10)

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