Optical lithography solutions for sub-65 nm semiconductor devices

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5040 II, Issue , 2003, Pages 753-762

  Mulkens, Jan ^a   McClay, James ^b   Tirri, Bruce ^b   Brunotte, Martin ^c   Mecking, Birgit ^c   Jasper, Hans ^a  

^a ASML   (Netherlands)

^b ASML US Inc   (United States)

^c CARL ZEISS SMT AG   (Germany)

Author keywords

157 nm; CaF2; Exposure system; Hard pellicle; Lithography; Purging

Indexed keywords

CRITICAL DIMENSION; HARD PELLICLE; INTRINSIC BIREFRINGENCE; STRESS BIREFRINGENCE;

BIREFRINGENCE; CALCIUM COMPOUNDS; NANOTECHNOLOGY; OPTICAL INSTRUMENT LENSES; OPTICAL TESTING; SEMICONDUCTOR DEVICE TESTING;

PHOTOLITHOGRAPHY;

EID: 0141610609     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.485382     Document Type: Conference Paper

References (1)

1. H Sewell et al., Initial Lithography Performance of Micrascan VII, SPIE 2003, ML5040-53