Robust Process Integration of 0.78μm2 Embedded SRAM with NiSi Gate and Low-K Cu Interconnect for 90nm SoC Applications

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2003, Pages 69-70

  Kim, Y W ^a   Ahn, J H ^a   Park, T S ^a   Oh, C B ^a   Lee, K T ^a   Kang, H S ^a   Lee, D H ^a   Ko, Y G ^a   Cheong, K S ^a   Jun, J W ^a   Liu, S H ^a   Kim, J ^a   Nam, J L ^a   Ha, S R ^a   Park, J B ^b   Song, S A ^b   Suh, K P ^a  

^a SAMSUNG Electronics   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EMBEDDED SYSTEMS; HOT CARRIERS; LITHOGRAPHY; ROBUSTNESS (CONTROL SYSTEMS); SCANNING ELECTRON MICROSCOPY; STATIC RANDOM ACCESS STORAGE; THRESHOLD VOLTAGE; TRANSMISSION ELECTRON MICROSCOPY; COPPER; FLUORINE COMPOUNDS; INTEGRATED CIRCUIT INTERCONNECTS; LOW-K DIELECTRIC; NICKEL COMPOUNDS; SILICON COMPOUNDS;

METAL CONTACTS (MC);

GATES (TRANSISTOR); SYSTEM-ON-CHIP;

6T-SRAM; 6T-SRAMS; ARF LITHOGRAPHY; CU INTERCONNECT; DUAL DAMASCENE; GATE OXIDE; LEADING EDGE TECHNOLOGY; PERFORMANCE; PROCESSES INTEGRATIONS; SRAM CELL;

EID: 0141538340     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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