Novel CMP Slurries for Planarization of Multilevel Copper Interconnect

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2003, Pages 123-124

  Song, J Y ^a   Chen, Y H ^a   Lee, S N ^a   Chiou, W C ^a   Tseng, T C ^a   Kuo, H H ^a   Chuang, C J ^a   Lin, K C ^a   Jang, S M ^a   Liang, M S ^a  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL MECHANICAL POLISHING; ELECTROMIGRATION; MORPHOLOGY; PARTICLE SIZE ANALYSIS; PH; SLURRIES; ALUMINA; ALUMINUM OXIDE; COPPER CORROSION; INTEGRATED CIRCUIT INTERCONNECTS; TANTALUM COMPOUNDS;

PATTERN DENSITY;

ELECTRIC CONNECTORS; GALVANIC CORROSION;

CHEMICAL COMPONENT; COPPER INTERCONNECTS; DESIGNED POLYMERS; DUAL DAMASCENE INTERCONNECT; MECHANICAL; MULTILEVELS; PLANARITY; PLANARIZATION; POLYMER BASED; RESISTANCE CONTROL;

EID: 0141538312     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

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4. S. M. Jang et al., Symp. on VLSI Tech., pp. 18-19, 2002.
5. H. C. Chen et al., IITC, pp. 256-258, 2000.