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Journal of Applied Physics

Volumn 87, Issue 6, 2000, Pages 2923-2925

Effect of arsenic precipitates on Fermi level in GaAs grown by molecular-beam epitaxy at low temperature

(3) Chen, Y H a Wang, Z G a Yang, Z b

a INSTITUTE OF SEMICONDUCTORS (China)

b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0141527123 PISSN: 00218979 EISSN: 10897550 Source Type: Journal
DOI: 10.1063/1.372278 Document Type: Article

Times cited : (5)

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