Estimation of EUV mask flatness for allowable pattern shift

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5037 II, Issue , 2003, Pages 841-849

  Chiba, Akira ^a   Sugawara, Minoru ^a   Nishiyama, Iwao ^a  

^a ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

Author keywords

EUV mask; Flatness; Lithography; OPD; Pattern shift; Period

Indexed keywords

MASKS; MATHEMATICAL MODELS; POLISHING; SURFACE TOPOGRAPHY; ULTRAVIOLET RADIATION;

EXTREME ULTRAVIOLET LITHOGRAPHY; FLATNESS; GLOBAL HEIGHT VARIATION; OUT OF PLANE DISPLACEMENT; PATTERN SHIFT;

PHOTOLITHOGRAPHY;

EID: 0141501214     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.483742     Document Type: Conference Paper

References (3)

1. S. Hector, "EUVL Masks: Requirements and Potential Solutions", SPIE Vol. 4688 (2002) p. 134.
2. K. Blaedel, J. Taylor, S. Hector, P. Yan, A. Ramamoorthy, and P. Brooker, "Vendor capability for low thermal expansion mask substrates for EUV Lithography", SPIE Vol. 4688 (2002) p. 767.
3. P. Mirkarimi, S. Bajt, and M Wall, "Mo/Si and Mo/Be multilayer thin films on Zerodur substrates for extreme-ultraviolet lithography", Applied Optics, Vol. 39, N. 10, 1617-1625, Apr (2000).