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Volumn 5038 I, Issue , 2003, Pages 663-673

Top down versus cross sectional SEM metrology and its impact on lithography simulation calibration

Author keywords

Bias; CDSEM; Cross section; Lithography; Simulation; Top down

Indexed keywords

ALGORITHMS; COMPOSITION; COMPUTER SIMULATION; OPTICAL VARIABLES MEASUREMENT; SCANNING ELECTRON MICROSCOPY;

EID: 0141500235     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.485041     Document Type: Conference Paper
Times cited : (8)

References (5)
  • 1
    • 0141866481 scopus 로고    scopus 로고
    • Inside PROLITH, FINLE Technologies
    • Chris A. Mack, Inside PROLITH, FINLE Technologies, 1997.
    • (1997)
    • Mack, C.A.1
  • 3
    • 0010364198 scopus 로고
    • Secondary electron line scans over high resolution resist images: Theoretical and experimental investigation of induced local electrical field effects
    • L. Grella, E. Di Fabrizio, M. Gentili, M. Baciocchi, L. Mastrogiacomo, R. Maggioria, C. Capodieci, "Secondary Electron Line Scans Over High Resolution Resist Images: Theoretical and Experimental Investigation of Induced Local Electrical Field Effects," J. Vac Sci, Technol. B12(6), 1994.
    • (1994) J. Vac Sci, Technol. , vol.B12 , Issue.6
    • Grella, L.1    Di Fabrizio, E.2    Gentili, M.3    Baciocchi, M.4    Mastrogiacomo, L.5    Maggioria, R.6    Capodieci, C.7


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.