A novel photoacid generator for chemically amplified resists with ArF exposure

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5039 II, Issue , 2003, Pages 1155-1163

  Asakura, Toshikage ^a   Yamato, Hitoshi ^a   Matsumoto, Akira ^a   Murer, Peter ^a   Ohwa, Masaki ^a  

^a CIBA GEIGY LTD   (Switzerland)

Author keywords

ArF; Chemical amplified resists; Non ionic; P parameter; Photoacid generator

Indexed keywords

ACTIVATION ENERGY; COMPUTER SIMULATION; DISSOLUTION; FOCUSING; IMAGE QUALITY; LITHOGRAPHY;

ARGON FLUORIDE; DEPTH OF FOCUS; DISSOLUTION RATE MEASUREMENT; NORBORNENE DICARBOXIMIDYL TRIFLUOROMETHANESULFONATE; TERTBUTYLPHENYL IODONIUM TRIFLATE; TRIPHENYLSULFONIUM TRIFLATE;

PHOTORESISTS;

EID: 0141499249     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.483733     Document Type: Conference Paper

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