Loss of light yield of doped lead tungstate crystals after irradiation

Chinese Physics Letters

Volumn 16, Issue 10, 1999, Pages 745-746

  He, Jing tang ^a   Lü, Yu sheng ^a   Chen, Duan bao ^a   Li, Zu hao ^a   Bian, Jian Guo ^a   Zhu, Guo yi ^a   Tang, Xiao wei ^a   Chen, Gang ^b   Zheng, Lian rong ^b   Chen, Xiao hong ^b   Ren, Shao xia ^b  

^a INSTITUTE OF HIGH ENERGY PHYSICS   (China)

^b Beijing Glass Research Institute   (China)

Author keywords

[No Author keywords available]

Indexed keywords

IRRADIATION;

BI-DOPING; LA DOPING; LEAD TUNGSTATE CRYSTAL; LIGHT YIELD; LOSS OF LIGHTS; LOW-DOSE RATES; MO-DOPING; PR DOPING; RADIATION HARDNESS; Y-DOPING;

TUNGSTEN COMPOUNDS;

EID: 0043285539     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/16/10/016     Document Type: Article

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3. S. Baccaro et al., Nucl. Instrum. Methods, A 385 (1997) 69.
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5. ZHANG Guo-quan et al., Chin. Phys. Lett. 15 (1998) 686.