Doping-induced type-II to type-I transition and interband optical gain in InAs/AISb quantum wells

Applied Physics Letters

Volumn 83, Issue 8, 2003, Pages 1581-1583

  Kolokolov, K I ^a   Ning, C Z ^a  

^a NASA AMES RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; DOPING (ADDITIVES); POLARIZATION; SEMICONDUCTING INDIUM COMPOUNDS;

OPTICAL GAIN;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0043283929     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1605236     Document Type: Article

References (12)

1. B. Brar, H. Kroemer, J. Ibbetson, and J. English, Appl. Phys. Lett. 62, 3303 (1993).
2. M. Inoue, M. Yano, H. Furuse, N. Nasu, and Y. Iwai, Semicond. Sci. Technol. 8, S121 (1993).
3. F. Fuchs, J. Schmitz, J. Ralston, and P. Koidl, Phys. Rev. B 49, 13638 (1994).
4. B. R. Bennett, B. V. Shannabrook, and E. R. Glaser, Appl. Phys. Lett. 65, 598 (1994).
5. C. Becker, I. Prevot, X. Marcadet, B. Vinter, and C. Sirtori, Appl. Phys. Lett. 78, 1029 (2001).
6. K. Ohtani, N. Matsumoto, H. Sakuma, and H. Ohno, Appl.Phys. Lett. 82, 37 (2003).
7. J. Li, K. Kolokolov, C. Ning, D. Larrabee, G. Khodaparast, J. Kono, K. Ueda, Y. Nakajima, S. Sasa, and M. Inoue, in Progress in Semiconductors II: Electronic and Optoelectronic Applications, edited by B. D. Weaver, M. Manasreh, C. Jagadish, and S. Zollner (Materials Research Society, Warrendale, PA, 2003), p. 571.
8. S. L. Chuang, Physics of Optoelectronic Devices (Wiley, New York, 1995).
9. K. I. Kolokolov, J. Li, and C. Z. Ning, Phys. Rev. B (to be published).
10. I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, J. Appl. Phys. 89, 5815 (2001).
11. G. Liu, S. L. Chuang, and S. Park, J. Appl. Phys. 88, 5554 (2000).
12. G. Liu and S. L. Chuang, Phys. Rev. B 65, 165220 (2002).