Difference in dependence of 1/f and RTS noise on current in quantum dots light emitting diodes

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5113, Issue , 2003, Pages 368-378

  Vandamme, Lode K J ^a   Belyakov, Alexander V ^b   Perov, Mikhail Yu ^b   Yakimov, Arkady V ^b  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b LOBACHEVSKY STATE UNIVERSITY OF NIZHNY NOVGOROD   (Russian Federation)

Author keywords

1 f noise; Burst noise; Light emitting diodes; Quantum dots; Random telegraph signal; Signal detection

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; FOURIER TRANSFORMS; FREQUENCY DOMAIN ANALYSIS; GAUSSIAN NOISE (ELECTRONIC); OPERATIONAL AMPLIFIERS; RANDOM PROCESSES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SIGNAL DETECTION; SPURIOUS SIGNAL NOISE; STATISTICAL METHODS;

BURST NOISE; QUANTUM DOT LIGHT EMITTING DIODE; RANDOM TELEGRAPH SIGNAL; SPECTRA DECOMPOSITION TECHNIQUE;

LIGHT EMITTING DIODES;

EID: 0043265625     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.503166     Document Type: Conference Paper

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